Research on High Performance InP - Based Long Wavelength Transistor View Homepage


Ontology type: schema:MonetaryGrant     


Grant Info

YEARS

2013-2016

FUNDING AMOUNT

860000 CNY

ABSTRACT

Transistor Laser (TL) has both the current control function of a transistor and the light emission function of a laser, which has a wide variety of potential applications. Up to now, room temperature operation of GaAs based TL has been achieved. The development of InP based TL, which emits at 1.5μm and thus is more suitable for optical fiber commutation system, however, is relatively slow. Base on related previous works of the applicants, high performance npn InP TL will be studied in this project with the following focused aspects: the fabrication of room temperature continuous work InP based TL; the fabrication of single mode DFB InP based TL; the fabrication of tunnel junction InP base TL; the study of the unique properties of TLs. The implement of this project will help to promote the practical application of InP based TL. More... »

URL

http://npd.nsfc.gov.cn/projectDetail.action?pid=61274071

Related SciGraph Publications

  • 2018-08. Fabrication of InP-based monolithically integrated laser transmitters in SCIENCE CHINA INFORMATION SCIENCES
  • 2016-09. High current gain transistor laser in SCIENTIFIC REPORTS
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