Growth of Centimeter - Graphene Single Crystals by Chemical Vapor Deposition View Homepage


Ontology type: schema:MonetaryGrant     


Grant Info

YEARS

2013-2016

FUNDING AMOUNT

300000 CNY

ABSTRACT

Graphene, a new material with great application potential, has stimulated intense research interest owing to its unique physical and chemical properties. Fabrication techniques for wafer scale graphene are already available. However, the quality of graphene in wafer scale differs from that of normal silicon as the fabrication of high quality and large size graphene single crystal preparation is s still a great challenge. In this study, we demonstrated a simple but efficient strategy to synthesize centimeter-sized graphene single crystal grains by regulating the supply of reactants in chemical vapor deposition process. The gradual increase in the temperature of carbon source and the flow rate of hydrogen were adapted to control the nucleation density andt drive the continuous growth of graphene grains. Meanwhile, the first principle calculations and chemical vapor reaction kinetics were introduced to set up the ?uid dynamics mechanism to explain the single crystal graphene growth process. The graphene-based back-gate ?eld-effect transistors (FETs) were fabricated on 300 nm SiO2/Si substrates to investigate the electronic properties of hexagonal millimeter-sized graphene domains. The considerable research on graphene has motivated the scalable production of high-quality graphene and graphene devices. More... »

URL

http://npd.nsfc.gov.cn/projectDetail.action?pid=11304337

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