Research on Terahertz Hg (HgCdTe) Detection in High Performance Narrow Bandgap Semiconductors View Homepage


Ontology type: schema:MonetaryGrant     


Grant Info

YEARS

2013-2016

FUNDING AMOUNT

770000 CNY

ABSTRACT

Terahertz(THz) wave has become one of the hottest spots in recent years owing to its unique characteristics and prominent value of applications. However, due to the booming development of THz technology, especially in some new rising fields such as terahertz imaging and security inspection, it requires some outstanding performance on THz detectors of short respond time, high sensitivity, room- temperature operation, miniaturization and reasonable costs. The present THz detectors cannot meet those requirements. So it is necessary to develop new kind of THz detectors with good performance which can fulfill the requirements of the new applications. In this project, we will develop a new principle of THz detectors based on electric field enhanced effect in Narrow Gap Semiconductor Mercury Cadmium Telluride (MCT). We will investigate the fundamental optical properties of MCT materials in THz range, establish a physical model of THz detectors, design the simulators of parameters. Then we will fabricate prototype detectors and test the performance of them according to the results of the simulations.The aim of this project is to develop the key THz detectors which can be integrated and operated at room temperature with fast response, high sensitivity. More... »

URL

http://npd.nsfc.gov.cn/projectDetail.action?pid=61274138

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