Graphene Field Effect Transistor and Its Integration Technology View Homepage


Ontology type: schema:MonetaryGrant     


Grant Info

YEARS

2012-2016

FUNDING AMOUNT

2900000 CNY

ABSTRACT

Graphene is a two-dimensional crystalline material whose carriers are Dirac fermions with extremely high mobility and are high-mobility materials with the hope of extending Moore's Law. Aiming at the problems existing in the application of graphene materials in field effect devices and integrated technologies, the graphene field-growth and graphene field-effect transistors and their integrated technologies are studied by taking full advantage of the excellent graphene material properties and the integration of silicon integrated circuit technology . Through in-depth research on nucleation, self-reconfiguration mechanism and growth mechanism of graphene, as well as the transport mechanism and behavior law of Dirac-Fermion in two-dimensional graphene crystal, from the perspective of microelectronics, Comprehensive solution to scientific problems and technological bottlenecks, to obtain a group of independent intellectual property rights and cutting-edge results, developed a 4-inch wafer level graphene material, cut-off frequency greater than 100 GHz graphene field effect transistor, graphene field effect device integration demonstration Verify, promote the graphene material research, application and development. Published 30 papers in SCI, applied for 20 patents. More... »

URL

http://npd.nsfc.gov.cn/projectDetail.action?pid=61136005

Related SciGraph Publications

  • 2017-03-09. Oriented graphene nanoribbons embedded in hexagonal boron nitride trenches in NATURE COMMUNICATIONS
  • 2016-09. The two timescales in the charge trapping mechanism for the hysteresis behavior in graphene field effect transistors in JOURNAL OF MATERIALS SCIENCE: MATERIALS IN ELECTRONICS
  • 2016-07. Characterization of the quality of metal–graphene contact with contact end resistance measurement in APPLIED PHYSICS A
  • 2016-02. Enhancement of the Electrical Properties of CVD-Grown Graphene with Ascorbic Acid Treatment in JOURNAL OF ELECTRONIC MATERIALS
  • 2015-12. Synthesis of large single-crystal hexagonal boron nitride grains on Cu–Ni alloy in NATURE COMMUNICATIONS
  • 2015-10. Undulate Cu(111) Substrates: A Unique Surface for CVD Graphene Growth in JOURNAL OF ELECTRONIC MATERIALS
  • 2015-09. Ultralight boron nitride aerogels via template-assisted chemical vapor deposition in SCIENTIFIC REPORTS
  • 2015-01. Effect of Hydrogen in Size-Limited Growth of Graphene by Atmospheric Pressure Chemical Vapor Deposition in JOURNAL OF ELECTRONIC MATERIALS
  • 2014-12. Van der Waals epitaxy and characterization of hexagonal boron nitride nanosheets on graphene in NANOSCALE RESEARCH LETTERS
  • 2014-12. High-Tc superconductivity in ultrathin Bi2Sr2CaCu2O8+x down to half-unit-cell thickness by protection with graphene in NATURE COMMUNICATIONS
  • 2014-12. Raman enhancement by graphene-Ga2O3 2D bilayer film in NANOSCALE RESEARCH LETTERS
  • 2013-12. Precisely aligned graphene grown on hexagonal boron nitride by catalyst free chemical vapor deposition in SCIENTIFIC REPORTS
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