Experimental Study on Spin Dynamics in Cubic GaN View Homepage


Ontology type: schema:MonetaryGrant     


Grant Info

YEARS

2011-2015

FUNDING AMOUNT

750000 CNY

ABSTRACT

In the field of semiconductor-based spin electronics research, it has been desirable to find materials with long spin life at room temperature. In GaAs-based materials, due to strong spin-orbit coupling, the spin life at room temperature is usually around 100 ps. In the wide band gap material, such as hexagonal GaN, ZnO, although the spin orbit coupling is weak, but because of a strong built-in electric field, spin life in the order of 10ps. It is theoretically predicted that in cubic GaN, there is no built-in electric field due to the structure of hexagonal GaN, and therefore has a very long spin lifetime, at room temperature in the order of ns. At present, the international just started this material spin characteristics of the study, some of the basic characteristics of the spin is not clear. In this paper, we will use the time-resolved Kerr rotation technique to study the spin dynamics of this material, including the precise determination of the electron g factor, and clarify the spin relaxation law in cubic GaN. In order to explore the spin- Of the potential applications to lay the foundation. More... »

URL

http://npd.nsfc.gov.cn/projectDetail.action?pid=11174338

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