Interfacial and Electronic Structures of Atomic Layer Deposition Dielectric / Graphene Nanostructures View Homepage


Ontology type: schema:MonetaryGrant     


Grant Info

YEARS

2011-2014

FUNDING AMOUNT

300000 CNY

ABSTRACT

With the discovery of graphene, the next generation of higher performance, more large-scale integrated circuits provide the most likely path. However, the sharp degradation of the carrier mobility in the graphene field effect transistor is a problem that must be solved before the application of the graphene device. In this project, we will aim at obtaining high quality gate / graphene interface systems and related physical and structural models, high mobility graphene prototype devices, and device models. The method comprises the following steps: by controlling the remote phonon scattering of the insulating material of the graphene device substrate to passivate the surface active group of the substrate insulating material to realize the low preforming functionalization of the graphene surface, and preparing the high quality atomic layer And the interfacial structure and physical characteristics of the two-dimensional crystal structure and electronic structure of the graphene material were studied. Under the comprehensive consideration of theoretical modeling, microstructure testing and device testing, the interface structure and other related physical and electrical characteristics of high mobility planetary graphene devices are analyzed, and the discrete process steps and physical models are integrated. Finally, To achieve the mobility of more than 8000 cm2 / Vs prototype devices and related processes on the performance of the mechanism of the mechanism. More... »

URL

http://npd.nsfc.gov.cn/projectDetail.action?pid=61106108

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