Raman G and 2D peaks of three - layer graphene View Homepage


Ontology type: schema:MonetaryGrant     


Grant Info

YEARS

2012-2015

FUNDING AMOUNT

250000 CNY

ABSTRACT

Graphene is a new generation of optoelectronic materials, with very large carrier mobility, room temperature quantum Hall effect, high mechanical strength and thermal conductivity and other excellent performance. British scientists have won the 2010 Nobel Prize in Physics for their groundbreaking research in the field of graphene. But the graphene band gap is zero, which greatly limits its application in optoelectronic devices. Studies have shown that the energy bands of double and triple graphene can be controlled by the electric field between layers. ABC stack structure Three layers of graphene can be opened through the electric field to 120 meV, and ABA stack structure of the band in the electric field under the action of more overlap. Therefore, three layers of graphene become a research hotspot. Electron - phonon, electron - electron coupling has an important effect on the photoelectric properties of graphene. The change of G peak and 2D peak in graphene Raman spectroscopy greatly reflects the strength of electron-phonon and electron-electron coupling in graphene. For the first time, this project has made a systematic study on the G and 2D peaks in doped three layers of graphene (including unintentional doping, nitrogen doping and three-layer graphene doped in electric field). In this paper, The photoelectric properties of graphene and its optoelectronic applications are important. More... »

URL

http://npd.nsfc.gov.cn/projectDetail.action?pid=51202216

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