Graphite monolayer preparation and properties of bilayer and multilayer films View Homepage


Ontology type: schema:MonetaryGrant     


Grant Info

YEARS

2008-2010

FUNDING AMOUNT

320000 CNY

ABSTRACT

We grew graphene samples by the mechanical exfoliation method, the chemical vapor deposition method (CVD) and reduction of graphite oxide method, fabricated field effect transistors, characterized graphenes by several methods and investigated the annealing influence on graphene microstructure. We fabricated several tens micrometers graphene monolayers and bilayers on SiO2/Si and mica substrates by exfoliating graphite. The graphenes were characterized by the optical microscope, Raman spectroscopy, scanning electron microscope (SEM) and scanning tunneling microscope (STM). That the image contrast changes of the graphene monolayer and the multilayer in the SEM operated with different electron accelerated voltage shows the possibility to distinguish a graphene monolayer from graphene multilyaers, which has an important application in the in-situ process of fabricating the graphene devices. We grew several tens centimeters graphene samples by the CVD method, and prepared graphene samples by reduction process of graphite oxides. We also realized the large area CVD graphene layers transfer to arbitrary substrates and fabricated the CVD graphene transistors. For the sake of improving the graphene quality, we annealed graphene monolayer samples at different temperature from 200 to 500°C. We found that the annealing proc More... »

URL

http://npd.nsfc.gov.cn/projectDetail.action?pid=50772110

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