DNA self-assembly technology, based on room temperature single-electron transistor fabrication View Homepage


Ontology type: schema:MonetaryGrant     


Grant Info

YEARS

2011-2013

FUNDING AMOUNT

500000 CNY

ABSTRACT

Single-electron transistors can achieve logical operation at nanoscale scale and will play a very important role in future nanometer integrated circuits. At present, due to the limitations of the preparation method, can not be room temperature single-electron transistor to achieve mass, low cost, consistent manufacturing, limiting its wide range of applications. Therefore, the realization of room temperature single-electron transistor low-cost reliable manufacturing is a very difficult challenge! This application proposes a room temperature single electron transistor manufacturing based on DNA self-assembly technology. Firstly, the DNA two-dimensional template is constructed by self-assembly of "bottom-up" DNA, and then the nanoparticles are modified and mineralized on the template, and the quantum dot-source-drain-gate core structure of single electron transistor is fabricated. The core structure of the core structure and microelectronics technology in parallel manufacturing of single-electron transistor peripheral metal interconnect electrodes to achieve the realization of room temperature single-electron transistor manufacturing. This nano-based manufacturing technology based on DNA technology will provide a practical method for the scale application of single-electron transistors. More importantly, DNA nanotechnology can be designed according to the requirements of different functional nanoelectronic devices, the design of specific DNA structure, to provide personalized manufacturing means, this new method for the next generation of nano-electronic devices to provide a new manufacturing technology. More... »

URL

http://npd.nsfc.gov.cn/projectDetail.action?pid=91023038

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