GaN high electron mobility transistor in research field emission and terahertz emission View Homepage


Ontology type: schema:MonetaryGrant     


Grant Info

YEARS

2008-2011

FUNDING AMOUNT

370000 CNY

ABSTRACT

THz (terahertz, THz) waves in an organic molecule detection, nondestructive imaging, molecular electronics, new materials and radar communications have important applications. Photonics and electronically generated THz waves but usually there is not adjustable frequency, or low temperature, or bulky, expensive or serious shortcomings, still not a mature work of miniature solid state at room temperature emission source. To fill this gap will substantially promote the development and application of THz technology. Recent preliminary studies have shown that at room temperature, high-electron-mobility transistor (HEMT) ballistic transport of electrons in the plasma can be generated THz wave excitation and radiation, but people have not found a controllable mechanism for transmitting frequency, pattern and efficiency. This paper aims to study possible ways to use room HEMT achieve single-frequency and high-power spontaneous radiation. This paper will use the excellent field emission properties of gallium nitride, field emission channel and a gate between the plasma wave to excite the channel to generate THz wave radiation; preparation THz resonator and coupled with the HEMT to achieve single frequency and longer high power output. Electron field emission applications for controlled THz emission and reveal the plasma wave forming mechanism provides a new way. More... »

URL

http://npd.nsfc.gov.cn/projectDetail.action?pid=60871077

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