Nanocrystal floating gate memory based on the basic research of the double heterostructure View Homepage


Ontology type: schema:MonetaryGrant     


Grant Info

YEARS

2007-2010

FUNDING AMOUNT

260000 CNY

ABSTRACT

Nanocrystals floating gate memory is the universities, research institutes and leading semiconductor companies as the research focus at home and abroad. At present the main problem is that the charge storage time is short, tunneling into the nanocrystalline carrier can easily return to the channel. The project, based on the existing work in order to improve the charge storage time of the goal, nanocrystals floating gate memory proposed a concept of double heterostructure: metal nano-dots and nanocrystals as constituting a double structure of nanocrystalline floating the composite gate memory storage unit, change usually single homogeneous nanocrystals storing charge ideas; taking full advantage of SiO2 and high-k materials of their respective advantages, tunneling oxide layer and the oxide layer control using the best match with Si interface SiO2, intermediate isolation dielectric layer is thick with small practical equivalent thickness high-k materials. This will not only increase the storage capacity, and can reduce the gate leakage current. Target: Preparation of a certain density, W, Pt, Ge and other nanodots uniformly distributed or nanocrystal arrays, the size of about 5 nm; prepared 8 × 8 memory cell array, the array yield more than 90%; storage capacity increase a times more; propose a physical model and storage mechanism double heterostructure memory. More... »

URL

http://npd.nsfc.gov.cn/projectDetail.action?pid=60776058

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