Research and development of universal semiconductor memory View Homepage


Ontology type: schema:MonetaryGrant     


Grant Info

YEARS

2014-2016

FUNDING AMOUNT

N/A

ABSTRACT

The project aims are research and development of universal memory that combines high performance and unlimited number of reprogramming cycles from RAM (Dynamic Random Access Memory, DRAM), non-volatility (ability to store information while the power is off) from FLASH memory, high data capacity from hard disks. Main characteristics of the developed memory are low power consumption, high performance, small size of a unit, vibrostability, compatibility with silicon technology. Greate growth in demand for memory chips lately is caused by appearance of a huge variety of electronic devices: digital cameras and camcorders, laptops, cell phones, digital audio recorders and players. One of the most important characteristics of memory for such devices is its high information density and non-volatility. Attempts to create a universal memory, which combines dignity of other memory kinds (non-volatility, short time to read/write, and random access), conducted continuously. Ferroelectric memory element (Ferroelectric RAM, FeRAM) is the most promising candidate for a universal memory. FeRAM is based on ferroelectric effect – ability of a ferroelectric material to store electrical polarization in the absence of an electric field for infinitely long time. Many world leaders in the production of silicon devices are involved into developing of a universal memory. Intel, IBM, Samsung, Hynix, Panasonic, Toshiba, Sony, Fujitsa, Sharp, Elpida, Hewlett Packard, Micron and other memory manufacturers have research and development departments which deals with modern perspective universal memory. Тon-profit company SEMATECH (Semiconductor Manufacturing Technology), USA is engaged in research and development of universal memory. SEMATECH is a non-profit organization which develops new technologies and devices for leading semiconductor companies such as Intel, IBM, Texas Instrument, Hewlett Packard, Micron, Samsung, Toshiba, Global Foundries, TSMS, etc. Intensive research of the universal memory are carried out by universities around the world: United States, Japan, Korea, China, Taiwan, Germany, France , UK, Italy, Belgium. In this project, an element FeRAM memory based on thin films of hafnium-zirconium-oxygen HfxZryO and HfO2:Si will be developed. Such films demonstrate ferroelectric effects, the ability to polarize in an electric field, and , subsequently, to maintain electrical polarization in the absence of an external voltage (non-volatile memory). Time of data storage and energy consumption of a FeRAM device are determined by leakage currents of the active medium (HfxZryO and HfO2:Si films). This project will be the first in experimentally and theoretically research of charge transport mechanisms of ferroelectric films HfxZryO and HfO2:Si. In results of the project recommendations how to increase the storage time and reduce power consumption based on FeRAM HfxZryO and HfO2:Si will be proposed. More... »

URL

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