A novel type of diode lasers with characteristics improved by using asymmetric barriers View Homepage


Ontology type: schema:MonetaryGrant     


Grant Info

YEARS

2014-2016

FUNDING AMOUNT

N/A

ABSTRACT

The project goal is to develop, synthesize and study new types of diode laser structures which combine a quantum-sized active region (quantum well or quantum dots) and asymmetric barriers. These asymmetric barriers, one at each size of the active region, are capable of suppressing the unwanted carrier population in the laser waveguide provided that a sufficient degree of asymmetry for both electrons and holes as well as a reasonable structural quality and optical perfection are achieved. Urgency and importance of the proposed research is sustained by good prospects of such heterostructures to improve temperature stability, to prevent the saturation of light-current curve, and to overcome other undesired effects associated with the carrier population and the parasitic recombination in the laser waveguide. Performance enhancement of optical communication lasers and high-power laser performance will be achieved. The proposed approach is especially suitable for those diode lasers where the parasitic waveguide recombination essentially restricts the performance, e.g. in high-brightness high-power lasers which exploit a large mode size design, in quantum-dot-based lasers, and in the InP-based material system. The method does not complicate the laser technology and can be applied to diode lasers of different material systems and types, whether it is GaAs or InP, quantum wells or quantum dots. Most importantly, the method can be used in conjunction with other approaches, which are currently exploited to improve the laser characteristics, for instance with the modulation p-type doped quantum dots, with mode size enlargement in the tilted wave laser design, etc. The project objectives are as follows: 1. To develop a design of an InP-based asymmetric barrier laser heterostructure comprising a self-organized quantum dot active region capable of emitting close to the 1.55um wavelength; to synthesize an epitaxial material, including quantum dot structure with performance enhanced by means of the modulation doping with acceptor impurities; to evaluate structural and optical quality of such structures; to process the structures into InP-based diode lasers with asymmetric barriers, to study peculiarities of such quantum dot lasers and to evaluate their temperature, threshold, spectral and other characteristics and to compare with those of the conventional InP-based lasers. Although the asymmetric barrier concept has been initially proposed for a quantum dot active region, all demonstrated asymmetric barrier lasers have relied on a quantum-well active region. Moreover, no material systems, other than GaAs-based, have been used in asymmetric barrier lasers. On the other hand, InP-based heterostructures are the key ones for optical communication, and InAs quantum dot structures are suitable for long-haul communication at the wavelength of 1.55um, since their wavelength corresponds to the lowest optical loss in silica fibers. Meanwhile, bandgap discontinuities at heterointerfaces of InP-based materials are typically small compared to those of GaAs-based materials. This results in a week carrier confinement in the active region, so that the waveguide carrier recombination is a serious issue for InP-based diode lasers. 2. To develop a design of a laser heterostructure which combines advantages of the asymmetric barrier concept and large effective mode size design (including a recently developed tilted wave laser); to synthesize epitaxial laser structure and to fabricate diode lasers; to evaluate their characteristics under high-power CW operation regime; to estimate their maximal power, power conversion efficiency, output beam divergence and brightness, robustness against degradation; to evaluate the effect of the asymmetric barriers on high-power operation. The waveguide layer thickness of reported asymmetric barrier lasers does not exceed 0.4 um since those lasers have been optimized for low-threshold operation. At the same time, the most high-power diode lasers presently exploit the large effective mode size concept, which is usually characterized by much broader waveguide, typically beyond 1 um. Expansion of the vertical spot size leads to a smaller optical power density at the laser facet as well as to a reduction in the vertical far field divergence and therefore results in an increased maximal power and higher brightness operation. However, the parasitic recombination is enhanced in proportion to the waveguide thickness, so the waveguide recombination suppression by means of the asymmetric barriers is extremely desired for further improvement of the performance of such lasers, which are widely used for optical pumping, material processing, etc. 3. Yet another objective of the project is to develop tight and efficient international collaboration, which should make it possible to pass on the experience of the foreign participants in areas, where they are world-wide known experts, to the researchers of the host institution, especially to young researchers, including PhD-students and post-graduate students. This will be the basis for our future cooperative R&D activities. Totally 9 foreign scientists from USA, Germany, Finland and Denmark will be involved to the project. More... »

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The proposed approach is especially suitable for those diode lasers where the parasitic waveguide recombination essentially restricts the performance, e.g. in high-brightness high-power lasers which exploit a large mode size design, in quantum-dot-based lasers, and in the InP-based material system. The method does not complicate the laser technology and can be applied to diode lasers of different material systems and types, whether it is GaAs or InP, quantum wells or quantum dots. Most importantly, the method can be used in conjunction with other approaches, which are currently exploited to improve the laser characteristics, for instance with the modulation p-type doped quantum dots, with mode size enlargement in the tilted wave laser design, etc.\n     The project objectives are as follows:\n     1. 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2 schema:description The project goal is to develop, synthesize and study new types of diode laser structures which combine a quantum-sized active region (quantum well or quantum dots) and asymmetric barriers. These asymmetric barriers, one at each size of the active region, are capable of suppressing the unwanted carrier population in the laser waveguide provided that a sufficient degree of asymmetry for both electrons and holes as well as a reasonable structural quality and optical perfection are achieved. Urgency and importance of the proposed research is sustained by good prospects of such heterostructures to improve temperature stability, to prevent the saturation of light-current curve, and to overcome other undesired effects associated with the carrier population and the parasitic recombination in the laser waveguide. Performance enhancement of optical communication lasers and high-power laser performance will be achieved. The proposed approach is especially suitable for those diode lasers where the parasitic waveguide recombination essentially restricts the performance, e.g. in high-brightness high-power lasers which exploit a large mode size design, in quantum-dot-based lasers, and in the InP-based material system. The method does not complicate the laser technology and can be applied to diode lasers of different material systems and types, whether it is GaAs or InP, quantum wells or quantum dots. Most importantly, the method can be used in conjunction with other approaches, which are currently exploited to improve the laser characteristics, for instance with the modulation p-type doped quantum dots, with mode size enlargement in the tilted wave laser design, etc. The project objectives are as follows: 1. To develop a design of an InP-based asymmetric barrier laser heterostructure comprising a self-organized quantum dot active region capable of emitting close to the 1.55um wavelength; to synthesize an epitaxial material, including quantum dot structure with performance enhanced by means of the modulation doping with acceptor impurities; to evaluate structural and optical quality of such structures; to process the structures into InP-based diode lasers with asymmetric barriers, to study peculiarities of such quantum dot lasers and to evaluate their temperature, threshold, spectral and other characteristics and to compare with those of the conventional InP-based lasers. Although the asymmetric barrier concept has been initially proposed for a quantum dot active region, all demonstrated asymmetric barrier lasers have relied on a quantum-well active region. Moreover, no material systems, other than GaAs-based, have been used in asymmetric barrier lasers. On the other hand, InP-based heterostructures are the key ones for optical communication, and InAs quantum dot structures are suitable for long-haul communication at the wavelength of 1.55um, since their wavelength corresponds to the lowest optical loss in silica fibers. Meanwhile, bandgap discontinuities at heterointerfaces of InP-based materials are typically small compared to those of GaAs-based materials. This results in a week carrier confinement in the active region, so that the waveguide carrier recombination is a serious issue for InP-based diode lasers. 2. To develop a design of a laser heterostructure which combines advantages of the asymmetric barrier concept and large effective mode size design (including a recently developed tilted wave laser); to synthesize epitaxial laser structure and to fabricate diode lasers; to evaluate their characteristics under high-power CW operation regime; to estimate their maximal power, power conversion efficiency, output beam divergence and brightness, robustness against degradation; to evaluate the effect of the asymmetric barriers on high-power operation. The waveguide layer thickness of reported asymmetric barrier lasers does not exceed 0.4 um since those lasers have been optimized for low-threshold operation. At the same time, the most high-power diode lasers presently exploit the large effective mode size concept, which is usually characterized by much broader waveguide, typically beyond 1 um. 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Totally 9 foreign scientists from USA, Germany, Finland and Denmark will be involved to the project.
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